ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,559,371, issued on Feb. 24, was assigned to Purdue Research Foundation (West Lafayette, Ind.).
"Direct solution deposition of metal selenide semiconductors using novel metal-selenium complexes and films made therefrom" was invented by Rakesh Agrawal (West Lafayette, Ind.), Jonathan William Turnley (Lafayette, Ind.) and Swapnil Deshmukh (Tualatin, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of direct deposition of multinary metal polyselenide films, including precipitating alkylammonium polyselenide with an antisolvent, redissolution of precipitated alkylammonium polyselenide with a solvent, dissolving at least one metal source, such as ...