US Patent Issued to PSEMI on March 3 for "Circuits and methods for leakage reduction in MOS devices" (California Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,859, issued on March 3, was assigned to PSEMI Corp. (San Diego).

"Circuits and methods for leakage reduction in MOS devices" was invented by Buddhika Abesingha (Escondido, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various methods and circuital arrangements for leakage reduction in MOS devices are presented. A pull-up circuit is selectively coupled to a gate of the MOS device to provide control of a voltage to the gate that is larger than a source voltage. Voltage switching circuits selectively couple different voltages to the body and/or back-gate terminals of the MOS device. During a standby mode of operation, the leakage current of the...