US Patent Issued to Proterial on July 21 for "Silicon nitride substrate, silicon nitride circuit substrate, and evaluation method, evaluation device, and evaluation system for silicon nitride substrate and silicon nitride circuit substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,479, issued on July 21, was assigned to Proterial Ltd. (Tokyo).

"Silicon nitride substrate, silicon nitride circuit substrate, and evaluation method, evaluation device, and evaluation system for silicon nitride substrate and silicon nitride circuit substrate" was invented by Kazufumi Suenaga (Tokyo), Rei Fukumoto (Tokyo) and Youichiro Kaga (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon nitride substrate including a first surface, and a second surface disposed opposite the first surface. One of the first surface or the second surface is a measurement surface. On the measurement surface, a value of an average full-width-at-half-maximu...