US Patent Issued to Powerchip Semiconductor Manufacturing on Sept. 1 for "High frequency transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,198, issued on Sept. 1, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"High frequency transistor" was invented by Hsin-Cheng Lin (Taipei City, Taiwan), Avishek Das (New Taipei City, Taiwan), Kuan-Ying Chiu (Taoyuan City, Taiwan) and Chee-Wee Liu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high frequency transistor includes a substrate, a plurality of gates, a plurality of sources/drains, a first metal layer, a plurality of source/drain contacts, and a plurality of first gate contacts. The gates extend along a first direction on a surface of the substrate, and the sources/drains are disposed ...