US Patent Issued to Powerchip Semiconductor Manufacturing on April 7 for "CMOS image sensor with 3D monolithic OSFET and FEMIM" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,824, issued on April 7, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"CMOS image sensor with 3D monolithic OSFET and FEMIM" was invented by Shou-Zen Chang (Hsinchu City, Taiwan), Ming-Han Liao (Hsinchu City, Taiwan), Min-Cheng Chen (Hsinchu County, Taiwan) and Shang-Shiun Chuang (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CMOS image sensor with 3D monolithic OSFET and FEMIM capacitor, including a substrate with CMOS devices formed thereon, a BEOL interconnect layer on the substrate and with BEOL interconnects formed therein, a pixel circuit layer on the BEOL interconnect layer. The OSFETs a...