US Patent Issued to Powerchip Semiconductor Manufacturing on April 14 for "Silicon capacitor structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,488, issued on April 14, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"Silicon capacitor structure and method of manufacturing the same" was invented by Li-Peng Chang (Hsinchu City, Taiwan), Chih-Ling Hung (Hsinchu County, Taiwan) and San-Jung Chang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a silicon capacitor structure, including a substrate, an interlayer dielectric (ILD) layer on the substrate, a capacitor recess extending from a surface of the ILD layer into the substrate, a capacitor in the capacitor recess, wherein the capacitor includes a bottom elect...