US Patent Issued to POWER INTEGRATIONS on March 3 for "Lateral surface gate vertical field effect transistor with adjustable output capacitance" (California Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,673, issued on March 3, was assigned to POWER INTEGRATIONS INC. (San Jose, Calif.).

"Lateral surface gate vertical field effect transistor with adjustable output capacitance" was invented by Kuo-Chang Robert Yang (Campbell, Calif.) and Sorin S. Georgescu (Gilroy, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lateral surface gate vertical field effect transistor with adjustable output capacitance is described herein. The lateral surface gate vertical field effect transistor includes both a lateral gate and a trench gate. The lateral gate modulates a surface channel and the trench gate includes a controllable depth. The controllable depth ma...