US Patent Issued to PORO TECHNOLOGIES on March 31 for "Semiconductor structure and method of manufacture" (British Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,537, issued on March 31, was assigned to PORO TECHNOLOGIES LTD (Cambridge, Great Britain).

"Semiconductor structure and method of manufacture" was invented by Muhammad Ali (Cambridge, Great Britain), Rachel Oliver (Cambridge, Great Britain) and Tongtong Zhu (Cambridge, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure comprises a layer of a first III-nitride material having a first lattice dimension; a non-porous layer of a second III-nitride material having a second lattice dimension different from the first lattice dimension; and a porous region of III-nitride material disposed between the layer of first III-n...