US Patent Issued to PLESSEY SEMICONDUCTORS on July 7 for "Light emitting diode precursor and its fabrication method" (British Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,503, issued on July 7, was assigned to PLESSEY SEMICONDUCTORS Ltd. (Plymouth, Great Britain).

"Light emitting diode precursor and its fabrication method" was invented by Wei Sin Tan (Plymouth, Great Britain), Andrea Pinos (Plymouth, Great Britain), Samir Mezouari (Plymouth, Great Britain), Kevin Stribley (Plymouth, Great Britain) and Gary Day (Plymouth, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a Light Emitting Diode (LED) precursor is provided. The method comprises forming a LED stack comprising a plurality of Group III-nitride layers on a substrate, the LED stack comprising a LED stack surface formed on an opp...