ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,555, issued on July 28, was assigned to PixArt Imaging Inc. (Hsin-Chu City, Taiwan).
"Photodiode and manufacturing method thereof" was invented by Ren-Yu He (Hsin-Chu City, Taiwan) and Yu-Wei Wang (Hsin-Chu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A photodiode comprises a substrate, a first collection layer, a first type well layer, a second type well layer and a second collection layer. The substrate has a first surface and a second surface. The substrate defines a bias region and a signal region. The first collection layer, the first type well layer, the first type well layer, the second type well layer, and the second collectio...