US Patent Issued to PEKING UNIVERSITY on Sept. 22 for "Vertical photo-assisted metal organic chemical vapor deposition (MOCVD) apparatus and deposition method using same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,742,257, issued on Sept. 22, was assigned to PEKING UNIVERSITY (Beijing).

"Vertical photo-assisted metal organic chemical vapor deposition (MOCVD) apparatus and deposition method using same" was invented by Xinqiang Wang (Beijing), Zhaoying Chen (Beijing), Fang Liu (Beijing), Bowen Sheng (Beijing) and Duo Li (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical photo-assisted metal organic chemical vapor deposition (MOCVD) apparatus and a deposition method using the same are provided. In the vertical photo-assisted MOCVD apparatus, a light field vertically acts on the layered reactant gas flows, and interaction paths between the light fiel...