US Patent Issued to PEKING UNIVERSITY on March 3 for "Method for implementing content-addressable memory based on ambipolar FET" (Chinese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,464, issued on March 3, was assigned to PEKING UNIVERSITY (Beijing).

"Method for implementing content-addressable memory based on ambipolar FET" was invented by Ru Huang (Beijing), Weikai Xu (Beijing), Jin Luo (Beijing) and Qianqian Huang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method for implementing a content addressable memory based on an ambipolar FET, wherein a linear non-separable comparison operation required for a CAM cell is realized based on a single ambipolar FET with a threshold voltage through interposing a memory layer between a gate dielectric layer and a control gate of the ambipolar FET in source/drain...