US Patent Issued to PEKING UNIVERSITY on Feb. 17 for "Preparation method of aluminum nitride composite structure based on two-dimensional (2D) crystal transition layer" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,553,148, issued on Feb. 17, was assigned to PEKING UNIVERSITY (Beijing).

"Preparation method of aluminum nitride composite structure based on two-dimensional (2D) crystal transition layer" was invented by Xinqiang Wang (Beijing), Fang Liu (Beijing), Zhaoying Chen (Beijing), Bowen Sheng (Beijing), Yucheng Guo (Beijing) and Bo Shen (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer is provided. The preparation method includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; f...