ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,205, issued on May 19, was assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co. LTD. (Osaka, Japan).
"Nitride semiconductor device" was invented by Manabu Yanagihara (Osaka, Japan), Masayuki Kuroda (Osaka, Japan), Hiroto Yamagiwa (Hyogo, Japan), Hideyuki Okita (Osaka, Japan) and Masahiro Hikita (Hyogo, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes: a first active area surrounded by an isolation area; and the following electrodes above the first active area: a source electrode; a first gate electrode and a second gate electrode, one on either side of and spaced from the source electrode in a first d...