US Patent Issued to Pakal Technologies on March 3 for "Insulated gate power device with epitaxially grown substrate layers" (Washington, Oregon Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,639, issued on March 3, was assigned to Pakal Technologies Inc. (San Francisco).

"Insulated gate power device with epitaxially grown substrate layers" was invented by Paul M. Moore (Hillsboro, Ore.) and Vladimir Rodov (Seattle).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a layered, high power vertical insulated-gate switch uses an n-type substrate. A p-well is formed by implantation in the top surface of the substrate followed by implanting n-type dopants in the p-well to form n+ source regions. Trenched gates are formed extending through the n+ source regions and into the p-well. The wafer is transferred to a carrier and the b...