ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,428, issued on July 21, was assigned to Oxford Instruments Nanotechnology Tools Ltd. (High Wycombe, Great Britain).
"Method of preparing a silicon carbide wafer" was invented by Samantha Mazzamuto (Abingdon, Great Britain), Andrew Newton (Abingdon, Great Britain), Matthew Loveday (Abingdon, Great Britain) and Michael Cooke (Abingdon, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of preparing a silicon carbide wafer for subsequent epitaxial growth thereon is disclosed. The method comprises (a) placing the silicon carbide wafer onto a support table in a plasma processing chamber such that the surface of the silicon carbide wafe...