ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,857, issued on Aug. 4, was assigned to Otava RF Inc. (Moorestown, N.J.).

"Method and apparatus for an asymmetric RF switch" was invented by Thomas Higgins (Moorestown, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An asymmetric RF switch for micro or millimeter waves, with each shunt or passthrough stack having two or more series FETs of approximately same channel width. A first lowest loss path, having only transmission line, passing through a second node, between common and first selectable ports. A second path, between the common and second selectable ports, passing through the second node, a passthrough stack, and a first node. Isolating th...