US Patent Issued to OMNIVISION TECHNOLOGIES on June 23 for "Vertical transfer gate doping distribution for charge transfer from a photodiode" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,735, issued on June 23, was assigned to OMNIVISION TECHNOLOGIES INC. (Santa Clara, Calif.).

"Vertical transfer gate doping distribution for charge transfer from a photodiode" was invented by Hui Zang (San Jose, Calif.) and Vincent Venezia (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pixel cell includes a photodiode disposed in a semiconductor material. A floating diffusion is disposed in the semiconductor material. A transfer gate includes a vertical transfer gate structure disposed in the semiconductor material between the photodiode and the floating diffusion. The transfer gate is coupled between the photodiode and the float...