US Patent Issued to NXP USA on May 5 for "Semiconductor device with diffusion barrier layer and method of fabrication therefor" (Arizona Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,011, issued on May 5, was assigned to NXP USA INC. (Austin, Texas).

"Semiconductor device with diffusion barrier layer and method of fabrication therefor" was invented by Jie Hu (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate with an upper surface and a channel, a dielectric layer disposed over the upper surface, and a diffusion barrier layer disposed over the dielectric layer. The diffusion barrier layer is patterned to include multiple segments. A gate electrode is formed over the semiconductor substrate and is electrically coupled to the channel. A drain opening is spatially ...