US Patent Issued to NXP USA on July 28 for "Semiconductor device with self-aligned gate and field plate and method of fabrication therefor" (Arizona Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,472, issued on July 28, was assigned to NXP USA INC. (Austin, Texas).

"Semiconductor device with self-aligned gate and field plate and method of fabrication therefor" was invented by Philippe Renaud (Chandler, Ariz.) and Congyong Zhu (Gilbert, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of a semiconductor device includes a semiconductor substrate and one or more lower dielectric layers on the surface of the substrate. Source, drain, gate, and field plate openings, which are formed in a self-aligned manner, extend through the lower dielectric layer(s) to the substrate. A conformal dielectric layer is disposed over the lower die...