US Patent Issued to NXP USA on July 21 for "Transistor gate structure with insulating layer and method of fabrication therefor" (Arizona Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,252, issued on July 21, was assigned to NXP USA INC. (Austin, Texas).

"Transistor gate structure with insulating layer and method of fabrication therefor" was invented by Darrell Glenn Hill (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes a semiconductor substrate and a gate structure formed at the upper surface of the substrate. The gate structure includes a metal gate electrode and a gate insulating layer overlying the metal gate electrode, where edges of the gate insulating layer correspond to edges of the metal gate electrode. The transistor device also includes a first dielectric layer formed over the...