US Patent Issued to NXP USA on July 14 for "Integrated circuit with dielectric layer having selectively implanted stress-setting dopants" (Texas, Oregon Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,172, issued on July 14, was assigned to NXP USA Inc. (Austin, Texas).

"Integrated circuit with dielectric layer having selectively implanted stress-setting dopants" was invented by Douglas Michael Reber (Austin, Texas), Ertugrul Demircan (Eugene, Ore.) and Mehul D. Shroff (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a dielectric layer located over one or more metal interconnect layers. The dielectric layer includes selective regions of implanted stress-setting dopants to provide different stress profiles in the dielectric layer to counteract the stress imparted from package structures. Accordingly, the...