US Patent Issued to NXP USA on Jan. 20 for "Management of refresh operations in an embedded dynamic random access memories (DRAMs) having canary cells" (Texas Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,103, issued on Jan. 20, was assigned to NXP USA Inc. (Austin, Texas).

"Management of refresh operations in an embedded dynamic random access memories (DRAMs) having canary cells" was invented by Nihaar N. Mahatme (Austin, Texas) and Anirban Roy (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic random access memory (DRAM) includes a plurality of main bit cells, a first set of write bit lines, a first set of write word lines, a plurality of canary cells, a second set of write bit lines, and a second set of write word lines. Each main bit cell has a capacitive storage element and is coupled to a corresponding write bit line of the...