US Patent Issued to NXP on March 24 for "Semiconductor device with reinforced dielectric and method therefor" (Philippine, Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,518, issued on March 24, was assigned to NXP B.V. (Eindhoven, Netherlands).

"Semiconductor device with reinforced dielectric and method therefor" was invented by Tsung Nan Lo (Taoyuan City, Taiwan) and Antonio Aguinaldo Marquez Macatangay (Sta. Rosa, Philippines).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over a semiconductor die, a portion of the RDL contacting a die pad of the semiconductor die. A non-conductive layer is formed over the RDL. An opening in the non-conductive layer is formed exposing a portion of the RDL. A plur...