US Patent Issued to NXP on July 14 for "ESD circuit with GGNMOS transistors and ballast circuits" (Dutch, American Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,683,389, issued on July 14, was assigned to NXP B.V. (Eindhoven, Netherlands).

"ESD circuit with GGNMOS transistors and ballast circuits" was invented by Guido Wouter Willem Quax (Wijchen, Netherlands) and Alma Anderson (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge circuit for a semiconductor die includes a plurality of GGNMOS transistors coupled between a first rail and a second rail of the semiconductor die. Each GGNMOS transistor includes a body contact that is coupled to a trigger rail through a ballast circuit and is coupled to the second rail. During the detection of an ESD event of a sufficient severit...