ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,768, issued on April 7, was assigned to NXP B.V. (Eindhoven, Netherlands).
"FinFET with gate extension" was invented by Viet Thanh Dinh (Leuven, Belgium), Asanga H Perera (West Lake Hills, Texas) and Arjan Mels (Wijchen, Netherlands).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and methods of forming the same include a semiconductive fin protruding vertically from a body region and extending along a first direction, an insulator material above the body region and surrounding a lower portion of the fin, and a gap region between first and second ends of the semiconductive fin where at least a top portion of the semiconductive f...