ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,364, issued on March 17, was assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN (Kyoto, Japan).
"Semiconductor laser device" was invented by Yasuo Baba (Toyama, Japan) and Tohru Nishikawa (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laser device includes a substrate including a main surface, a semiconductor laser element including a resonator extending along a first direction, and a plurality of first wire groups and a plurality of second wire groups arranged along the first direction. Each first wire group includes a first wire bonded to a first bonding region of a top surface of the semiconductor laser element and a...