US Patent Issued to Nuvoton Technology Corporation Japan on July 28 for "Semiconductor laser device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,695,274, issued on July 28, was assigned to Nuvoton Technology Corporation Japan (Kyoto, Japan).

"Semiconductor laser device and method of manufacturing the same" was invented by Toru Takayama (Toyama, Japan), Togo Nakatani (Toyama, Japan), Hiroki Nagai (Toyama, Japan), Takashi Yumoto (Toyama, Japan), Takeshi Yokoyama (Toyama, Japan) and Shoichi Takasuka (Hyogo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laser device includes an N-type cladding layer, an active layer, and a P-type cladding layer. The active layer includes a well layer, a P-side first barrier layer above the well layer, and a P-side second barrier layer above th...