US Patent Issued to Novel Crystal Technology on Aug. 4 for "Single crystal growth apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,698,569, issued on Aug. 4, was assigned to Novel Crystal Technology Inc. (Saitama, Japan).

"Single crystal growth apparatus" was invented by Takuya Igarashi (Saitama, Japan), Yuki Ueda (Saitama, Japan) and Kimiyoshi Koshi (Saitama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single crystal growth apparatus to grow a single crystal of a gallium oxide-based semiconductor. The apparatus includes a crucible that includes a seed crystal section to accommodate a seed crystal, and a growing crystal section which is located on the upper side of the seed crystal section and in which the single crystal is grown by crystallizing a raw material melt accom...