US Patent Issued to nLIGHT on May 19 for "Strain-engineered cladding layer for optimized active region strain and improved laser diode performance" (Oregon Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,633,725, issued on May 19, was assigned to nLIGHT Inc. (Camas, Wash.).

"Strain-engineered cladding layer for optimized active region strain and improved laser diode performance" was invented by Zhigang Chen (Portland, Ore.) and Manoj Kanskar (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments may include a laser diode having a strain-engineered cladding layer for optimized active region strain and improved laser diode performance. In one embodiment, the laser diode may include a semiconductor substrate having a material composition with a first lattice constant; and a plurality of epitaxy layers form on the semiconductor subst...