ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,754,479, issued on Oct. 6, was assigned to NISSAN CHEMICAL Corp. (Tokyo).
"EUV resist underlayer film-forming composition" was invented by Shou Shimizu (Toyama, Japan), Ryuta Mizuochi (Toyama, Japan) and Mamoru Tamura (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern and producing a semiconductor device, which uses this composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film, said composition containing an organic solvent and a reaction product of a...