ALEXANDRIA, Va., May 12 -- United States Patent no. 12,625,431, issued on May 12, was assigned to NISSAN CHEMICAL Corp. (Tokyo).
"EUV resist underlayer film-forming composition" was invented by Shou Shimizu (Toyama, Japan) and Mamoru Tamura (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. The composition for forming an EUV resist underlayer film has a basic organic group substituted with a protective group on a side chain of ...