ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,782, issued on July 21, was assigned to NISSAN CHEMICAL Corp. (Tokyo).

"Resist underlayer film-forming composition comprising fluoroalkyl group-containing organic acid or salt thereof" was invented by Tetsuya Kimura (Toyama, Japan) and Hirokazu Nishimaki (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lithographic process for the production of a semiconductor device has recently caused a problem in terms of generation of a sublime component (sublimate) derived from a low-molecular-weight compound (e.g., polymer resin, crosslinking agent, or crosslinking catalyst) during baking upon formation of a resist underlayer film from a resist ...