ALEXANDRIA, Va., July 14 -- United States Patent no. 12,681,389, issued on July 14, was assigned to NISSAN CHEMICAL Corp. (Tokyo).
"EUV resist underlayer film-forming composition" was invented by Shou Shimizu (Toyama, Japan) and Mamoru Tamura (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A composition for forming a resist underlayer film that enables formation of an intended resist pattern, and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film includes: a compound represented by formula (1); a polymer; and an organic solvent...