US Patent Issued to NISSAN CHEMICAL on Jan. 20 for "Method for cleaning semiconductor substrate, method for producing processed semiconductor substrate, and stripping composition" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,529,018, issued on Jan. 20, was assigned to NISSAN CHEMICAL Corp. (Tokyo).

"Method for cleaning semiconductor substrate, method for producing processed semiconductor substrate, and stripping composition" was invented by Takahisa Okuno (Toyama, Japan), Masaki Yanai (Toyama, Japan), Takuya Fukuda (Toyama, Japan), Hiroto Ogata (Toyama, Japan), Shunsuke Moriya (Toyama, Japan), Hiroshi Ogino (Toyama, Japan) and Tetsuya Shinjo (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover comp...