US Patent Issued to Nippon Micrometal on Sept. 8 for "Bonding wire for semiconductor devices" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,530, issued on Sept. 8, was assigned to Nippon Micrometal Corp. (Saitama, Japan).

"Bonding wire for semiconductor devices" was invented by Daizo Oda (Saitama, Japan), Motoki Eto (Saitama, Japan), Takashi Yamada (Saitama, Japan), Teruo Haibara (Saitama, Japan) and Ryo Oishi (Saitama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes: a core material of Cu or Cu alloy; and a coatin...