US Patent Issued to Nippon Micrometal on Aug. 25 for "Bonding wire for semiconductor devices" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,208, issued on Aug. 25, was assigned to Nippon Micrometal Corp. (Saitama, Japan).

"Bonding wire for semiconductor devices" was invented by Daizo Oda (Saitama, Japan), Motoki Eto (Saitama, Japan), Takashi Yamada (Saitama, Japan), Teruo Haibara (Saitama, Japan) and Ryo Oishi (Saitama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieves a favorable bond reliability of the 2nd bonded part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy...