US Patent Issued to NICHIA on March 31 for "Method of producing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,534, issued on March 31, was assigned to NICHIA Corp. (Anan, Japan).

"Method of producing semiconductor device" was invented by Yoshiki Yamaguchi (Suita, Japan), Hiroki Hayashi (Anan, Japan), Satoshi Okumura (Anan, Japan), Minoru Yamamoto (Anan, Japan) and Hiroaki Tamemoto (Anan, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the m...