US Patent Issued to NICHIA on July 28 for "Nitride semiconductor element and method of manufacturing nitride semiconductor element" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,585, issued on July 28, was assigned to NICHIA Corp. (Anan, Japan).

"Nitride semiconductor element and method of manufacturing nitride semiconductor element" was invented by Ryota Funakoshi (Tokushima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a nitride semiconductor element includes: providing a first light emission part comprising a first n-side semiconductor layer, a first active layer formed on the first n-side semiconductor layer, and a first p-side semiconductor layer formed on the first active layer; forming a first layer such that the first layer contains an n-type impurity of a first concentration; formi...