US Patent Issued to NGK INSULATORS on July 14 for "Group-III element nitride semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,040, issued on July 14, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"Group-III element nitride semiconductor substrate" was invented by Masahiro Sakai (Nagoya, Japan), Katsuhiro Imai (Nagoya, Japan) and Hiroki Kobayashi (Chiryu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface, wherein warping of a crystal plane of the first surface has a plurality of extremes."

The patent was filed on Aug. 18, 2023, under Application No. 18/451,934.

*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/neta...