ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,795, issued on Feb. 24, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).
"Multilayer structure" was invented by Hiroshi Fukui (Obu, Japan), Morimichi Watanabe (Nagoya, Japan) and Jun Yoshikawa (Nagoya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of Alpha-Ga2O3 or an Alpha-Ga2O3-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 micro metre. The semic...