US Patent Issued to NGK INSULATORS on Aug. 25 for "Group-III element nitride semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,056, issued on Aug. 25, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan).

"Group-III element nitride semiconductor substrate" was invented by Katsuhiro Imai (Nagoya, Japan) and Tomohiko Sugiyama (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface. The Group-III element nitride semiconductor substrate has a c-plane tilted with respect to a direction of the first surface, and a direction of the tilt falls between a greater than1-100less than direction and a greater than11-20less than direction."

The patent was filed on June 30, 2023, under...