US Patent Issued to NGK INSULATORS, NGK ADREC on June 16 for "Method of manufacturing Si-SiC-based composite structure" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,531, issued on June 16, was assigned to NGK INSULATORS Ltd. (Nagoya, Japan) and NGK ADREC Co. LTD. (Mitake Cho, Japan).

"Method of manufacturing Si-SiC-based composite structure" was invented by Sora Goto (Komaki-City, Japan), Shuhei Kuno (Komaki-City, Japan), Daisuke Kimura (Nagoya-City, Japan) and Hiroomi Matsuba (Mizunami, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of manufacturing a Si-SiC-based composite structure capable of improving the manufacturing efficiency of the Si-SiC-based composite structure. The method of manufacturing a Si-SiC-based composite structure includes a step of impregnating a molten metal co...