US Patent Issued to Nexperia on July 21 for "Semiconductor device comprising mutually separated trench structures" (Dutch Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,230, issued on July 21, was assigned to Nexperia B.V. (Nijmegen, Netherlands).

"Semiconductor device comprising mutually separated trench structures" was invented by Hungjin Kim (Nijmegen, Netherlands) and Phil Rutter (Nijmegen, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of manufacturing thereof is provided, including one or more mutually separated trench structures and semiconductor devices in which a first polysilicon body and a second polysilicon body are provided in the trenches, and the first and second polysilicon bodies can be individually biased. The method according to the present disclosure...