US Patent Issued to Nexperia on July 14 for "Metal oxide semiconductor field effect transistor and method of manufacturing" (Dutch Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,810, issued on July 14, was assigned to Nexperia B.V. (Nijmegen, Netherlands).

"Metal oxide semiconductor field effect transistor and method of manufacturing" was invented by Steven Peake (Nijmegen, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Metal Oxide Semiconductor (MOS), Field Effect Transistor (FET), (MOSFET) is provided, including a semiconductor body having a first major surface, and two trenches extending in the semiconductor body from the first major surface, a source region of a first conductivity type adjacent sidewalls of the two trenches at the first major surface, a drain region of the first conductivity type adjacent ...