ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,770, issued on Feb. 24, was assigned to Nexperia B.V. (Nijmegen, Netherlands).
"Semiconductor device trench termination structure" was invented by Reza Behtash (Nijmegen, Netherlands), Alexander Harke (Nijmegen, Netherlands) and Christian Liguda (Nijmegen, Netherlands).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a termination structure is provided that is useful for trench semiconductor devices, such as trench Schottky diodes. The device includes a termination structure having a primary termination trench including a first insulating layer arranged on a sidewall and bottom, and a first polysilicon region spaced apart ...