US Patent Issued to Newport Fab on March 3 for "Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device" (California Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,680, issued on March 3, was assigned to Newport Fab LLC (Newport Beach, Calif.).

"Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device" was invented by Mantavya Sinha (Irvine, Calif.), Edward Preisler (San Clemente, Calif.) and David J. Howard (Irvine, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base...