US Patent Issued to New Jersey Institute of Technology on June 9 for "Resistive switching in a RRAM device" (New Jersey Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,970, issued on June 9, was assigned to New Jersey Institute of Technology (Newark, N.J.).

"Resistive switching in a RRAM device" was invented by Hieu Nguyen (Dover, N.J.), Ravi Teja Velpula (Colonia, N.J.) and Barsha Jain (Colonia, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory (RRAM) device is provided, and includes a top electrode layer, a bottom electrode layer, and an insulating layer positioned between the top electrode layer and the bottom electrode layer. The insulating layer includes a SiNx layer."

The patent was filed on Sept. 5, 2023, under Application No. 18/242,423.

*For further information, includi...