ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,575, issued on April 21, was assigned to Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO ('s-Gravenhage, Netherlands) and Technische Universiteit Delft (Delft, Netherlands).

"Accumulation gate for quantum device" was invented by Nodar Samkharadze (Delft, Netherlands) and Guoji Zheng (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A quantum device is described that includes a substrate with a layered structure, e.g. heterostructure, forming a quantum well layer. A doped region is connected to the layered structure for exchanging charge carriers with the quantum well layer. A patterned layer of electrically...