ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,670, issued on Aug. 25, was assigned to NEC Corp. (Tokyo).

"Semiconductor substrate, method for designing semiconductor substrate, and apparatus for manufacturing semiconductor substrate" was invented by Naoki Oshima (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate according to the present disclosure includes a high-frequency circuit, in which a size of each of dummy metal pieces and an interval of an arrangement of the dummy metal pieces constituting a dummy metal piece group in a first area which is inside a line constituting a high-frequency circuit is n times larger than that of a dummy metal piece group outside a ...